This is a list of the studies

performed by the SIRAD Collaboration

and published in the period April 1999-December 2004

 

Click here to download a word version of this document

 

Index

A) SIRAD Irradiation Facility. 2

B) Radiation Effects in Silicon Detectors. 3

C) Radiation Effects in Power Devices. 4

D) Radiation Effects in CMOS and JFET Tecnologies. 5

E) FPGA.. 7

F) E2PROM and Flash Memories. 8

G) High-Energy Physics ASICs. 9

H) X-ray source LNL. 10

I) Neutron Source LNL. 11

 

 

A) SIRAD Irradiation Facility

 

A1) "SIRAD: an irradiation facility at the LNL Tandem accelerator for radiation damage studies on semiconductor detectors and electronic devices and systems", J. Wyss, D. Bisello and D. Pantano, Nucl. Instrum. Meth., vol. A462, pp. 426-434, April 2001.

 

A2) "Ion electron emission microscopy at the SIRAD single event effect facility", D. Bisello, A. Kaminsky, A. Magalini, M. Nigro, D. Pantano, S. Sedykh and J. Wyss, Nucl. Instrum. Meth., vol. B181, pp. 254-257, July 2001.

 

A3) "Status of the ion electron emission microscope at the SIRAD single event effect facility", D. Bisello, A. Candelori, M. Dal Maschio, P. Giubilato, A. Kaminski, M. Nigro, D. Pantano, R. Rando, S. Sedykh, M. Tessaro and J. Wyss, Nucl. Instrum. Meth., vol. B210, pp. 142-146, September 2003.

 

A4) "The future of the SIRAD SEE facility: Ion-Electron Emission Microscopy", J. Wyss, D. Bisello, A. Kaminsky, A. Magalini, M. Nigro, D. Pantano and S. Sedhykh, Nucl. Instrum. Meth., vol. A476, pp. 621-627, January 2002.

 

A5) "The SIRAD irradiation facility for bulk damage and single event effect studies", D. Bisello, A. Candelori, P. Giubilato, A. Kaminski, D. Pantano, R. Rando, M. Tessaro and J. Wyss, Proc. of the Radiation and Its Effects on Components and Systems (RADECS) Conference, ESA SP-536, pp. 451-455, 15-19 September 2003.

 

A6) "The SIRAD irradiation facility for radiation damage studies induced by high-energy ions", D. Bisello, A. Candelori, P. Giubilato, A. Kaminski, D. Pantano, R. Rando, M. Tessaro and J. Wyss, Rad. Phys. Chem., vol. 71, pp. 717-719, October-November 2004.

 

 

B) Radiation Effects in Silicon Detectors

 

B1) "Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons", J. Wyss, D. Bisello, A. Candelori, A. Kaminsky and D. Pantano, Nucl. Instrum. Meth., vol. A457, pp. 595-600, January 2001.

 

B2) "Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons", D. Bisello, J. Wyss, A. Candelori, A. Kaminsky and D. Pantano,  IEEE Trans. Nucl. Sci., vol. 48, pp. 1020 -1027, August 2001.

 

B3) "Low- and high-energy proton irradiations of standard and oxygenated silicon diodes", A. Candelori, R. Rando, D. Bisello, N. Bacchetta, A. Kaminski, D. Pantano, I. Stavitski and J. Wyss, IEEE Trans. Nucl. Sci., vol. 48, pp. 2270 -2277, December 2001.

 

B4) "Charge collection efficiency of standard and oxygenated silicon microstrip detectors", I. Stavitski, R. Rando, D. Bisello, N. Bacchetta, A. Candelori, A. Kaminski and J. Wyss, Nucl. Instrum. Meth, vol. A485, pp. 105-108, June 2002.

 

B5) "Silicon diode radiation hardening for high energy physics detectors", R. Rando, A. Candelori, D. Bisello, A. Kaminski, A. Litovchenko, D. Pantano, I. Stavitski and J. Wyss, Nucl. Instrum. Meth., vol. A514, pp. 62-68, November 2003.

 

B6) "Radiation hardness of silicon detectors for high-energy physics applications", A. Candelori, D. Bisello, R. Rando, A. Kaminski, J. Wyss, A. Litovchenko, G.F. Dalla Betta, M. Lozano, M. Boscardin, C. Martinez, M. Ullan and N. Zorzi, IEEE Trans. Nucl. Sci., vol. 50, pp. 1121 -1128, August 2003.

 

B7) "Lithium ion-induced damage in silicon detectors", A. Candelori, D. Bisello, P.Giubilato, A. Kaminski, A. Litovchenko, M. Lozano, M. Ullan, R. Rando and J. Wyss, Nucl. Instrum. Meth, vol. A518, pp. 338-339, February 2004.

 

B8) "Investigation of the radiation tolerance of all-p-type termination structures for silicon detectors", C. Piemonte, M. Boscardin, L. Bosisio, A. Candelori, M. Ciacchi, G.-F. Dalla Betta, S. Dittongo, I. Rachevskaia and N. Zorzi, IEEE Trans. Nucl. Sci., vol. 51, pp. 1747-1751, August 2004.

 

B9) "Lithium ion irradiation effects on epitaxial silicon detectors", A. Candelori, A. Schramm, D. Bisello, D. Contarato, E. Fretwurst, G. Lindstrom, R. Rando and J. Wyss, IEEE Trans. Nucl. Sci., vol. 51, pp. 1766-1772, August 2004.

 

B10) "Lithium ion irradiation of standard and oxygenated silicon diodes", A. Candelori, D. Bisello, G.-F. Dalla Betta, P. Giubilato, A. Kaminski, A. Litovchenko, M. Lozano, J. R. Petrie, R. Rando, M. Ullan and J. Wyss, IEEE Trans. Nucl. Sci., vol. 51, pp. 2865-2871, October 2004.

 

B11) "Radiation hardness of semiconductor detectors for high energy physics applications", D. Bisello, A. Candelori, P. Giubilato, A. Kaminski, A. Litovchenko, D. Pantano, R. Rando and J. Wyss, Rad. Phys. Chem., vol. 71, pp. 709-711, October-November 2004.

 

 

C) Radiation Effects in Power Devices

 

C1) "Effects of heavy ion impact on power diodes", G. Busatto, F. Iannuzzo, J. Wyss, D. Pantano and D. Bisello, Proc. of the Radiation and Its Effects on Components and Systems (RADECS) Conference, pp. 205-209, 13-17 September 1999.

 

C2) "Experimental measurements of recombination lifetime in proton irradiated power devices", S. Daliento, A. Sanseverino, P. Spirito, G. Busatto and J. Wyss, Proc. of the 12th International Symposium on Power Semiconductor Devices and ICs, pp. 283 -285, 22-25 May 2000.

 

C3) "Non-destructive tester for single event burnout of power diodes", Busatto, F. Iannuzzo, F. Velardi and J. Wyss, Microelectronics Reliability, vol. 41, pp. 1725-1729, September-October 2001.

 

C4) "Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact", F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss and A. Candelori, Microelectronics Reliability, vol. 43, pp. 549-555, April 2003.

 

C5) "Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment", F. Velardia, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Curro', A. Cascio and F. Frisina, Microelectronics Reliability, vol. 43, pp. 1847-1851, September-November 2003.

 

C6) "Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ion exposure", F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Curro', A. Cascio, F. Frisina, A. Cavagnoli, Proc. of the Radiation and Its Effects on Components and Systems (RADECS) Conference, ESA SP-536, pp. 321-325, 15-19 September 2003.

 

 

D) Radiation Effects in CMOS and JFET Technologies

 

D1) "Low-field current on thin oxides after constant current or radiation stresses", M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa, A. Candelori and G. Ghidini, Journal of Non-Crystalline Solids, vol. 245, pp. 232-237, April 1999.

 

D2) "Electron irradiation effects on thin MOS capacitors", A. Candelori, A. Paccagnella, M. Cammarata, G. Ghidini and M. Ceschia, Journal of Non-Crystalline Solids, vol. 245, pp. 238-244, April 1999.

 

D3) "Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation", M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale and O. Flament, Proc. of the Radiation and Its Effects on Components and Systems (RADECS) Conference, pp. 233 -240, 13-17 September 1999.

 

D4) "A model of radiation induced leakage current (RILC) in ultra-thin gate oxides", L. Larcher, A. Paccagnella, M. Ceschia and G. Ghidini, IEEE Trans. Nucl. Sci., vol. 46, pp.  1553 -1561, December 1999.

 

D5) "Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation", M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale and O. Flament, IEEE Trans. Nucl. Sci., vol. 47, pp.  566 -573, June 2000.

 

D6) "Heavy ion irradiation of thin gate oxides", M. Ceschia, A. Paccagnella, M. Turrini, A. Candelori, G. Ghidini and J. Wyss, IEEE Trans. Nucl. Sci., vol. 47, pp. 2648 -2655, December 2000.

 

D7) "High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors", A. Candelori, A. Paccagnella, G. Raggi, J. Wyss, D. Bisello and G. Ghidini, Journal of Non-Crystalline Solids, vol. 280, pp. 193-201, February 2001.

 

D8) "Thin oxide degradation after high-energy ion irradiation", A. Candelori, M. Ceschia, A. Paccagnella, J. Wyss, D. Bisello and G. Ghidini, IEEE Trans. Nucl. Sci., vol. 48, pp.  1735 -1743, October 2001.

 

D9) "Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides", A. Cester, L. Bandiera, M. Ceschia, G. Ghidini and A. Paccagnella, IEEE Trans. Nucl. Sci., vol. 48, pp.  2093 -2100, December 2001.

 

D10) "High-energy ion irradiation effects on thin oxide p-channel MOSFETs", A. Candelori, D. Contarato, N. Bacchetta, D. Bisello, G. Hall, E. Noah, M. Raymond and J. Wyss,  IEEE Trans. Nucl. Sci., vol. 49, pp.  1364 -1371, June 2002.

 

D11) "Wear-out and breakdown of ultra-thin gate oxides after irradiation", A. Cester, Electronics Letters , vol. 38, pp. 1137 -1139, September 2002.

 

D12) "Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L", A. Cester, S. Cimino, A. Paccagnella, G. Ghindini and G. Guegan, Reliability Physics Symposium Proceedings, pp. 189 -195, 30 March-4 April 2003.

 

D13) "Accelerated wear-out of ultra-thin gate oxides after irradiation", A. Cester, S. Cimino, A. Paccagnella, G. Ghibaudo, G. Ghidini and J. Wyss, IEEE Trans. Nucl. Sci., vol. 50, pp.  729-734, June 2003.

 

D14) "Ionizing radiation effects on MOSFET drain current", S. Cimino, A. Cester, A. Paccagnella and G. Ghidini, Microelectronics Reliability, vol. 43, pp. 1247-1251, August 2003.

 

D15) "Collapse of MOSFET drrain current after soft breakdown", A. Cester, A. Paccagnella, G. Ghidini, S. Deleonibus, G. Guegan, IEEE Transactions on Device and Materials Reliability, Accepted for publication, 2003.

 

D16) "Comparison of ionizing radiation effects in 0.18 and 0.25 mm CMOS technologies for analog applications", M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi and A. Candelori, IEEE Trans. Nucl. Sci., vol. 50, pp. 1827-1833, December 2003.

 

D17) "Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiation", A. Cester, S. Cimino, E. Miranda, A. Candelori, G. Ghidini and A. Paccagnella, IEEE Trans. Nucl. Sci., vol. 50, pp. 2167-2175, December 2003.

 

D18) "Collapse of MOSFET drain current after soft breakdown", A. Cester, A. Paccagnella, G. Ghidini, S. Deleonibus and G. Guegan, IEEE Trans. Dev. Mat. Reliab., vol. 4, pp. 63-72, March 2004.

 

D19) "Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon", G.-F. Dalla Betta, M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi and A. Candelori, IEEE Trans. Nucl. Sci., vol. 51, pp. 2880-2866, October 2004.

 

D20) "Drain current decrease in MOSFETs after heavy ion irradiation", A. Cester, S. Gerardin, A. Paccagnella, J. R. Schwank, G. Vizkelethy, A. Candelori and G. Ghidini, IEEE Trans. Nucl. Sci., vol. 51, pp. 3150-3157, December 2004.

 

 

E) Radiation Effects in Field Programmable Gate Array (FPGA) Devices

 

E1) "Ion beam testing of SRAM-based FPGA's, M. Bellato, M. Ceschia, M. Menichelli, A. Papi, J. Wyss, A. Paccagnella, Proc. of the Radiation and Its Effects on Components and Systems (RADECS) Conference, pp. 474 -480, 10-14 September 2001.

 

E2) "Ion beam testing of ALTERA APEX FPGAs", M. Ceschia, M. Bellato, A. Paccagnella, A. Kaminski, Proc. of the NSREC Radiation Effects Data Workshop, pp. 45-50, 15-19 July 2002.

 

E3) "Analyzing SEU effects in SRAM-based FPGAs", M. Violante, M. Ceschia, M.S. Reorda, A. Paccagnella, P. Bernardi, M. Rebaudengo, D. Bortolato, M. Bellato, P. Zambolin, A. Candelori, Proc. of the On-Line Testing Symposium (IOLTS), 7-9 July 2003, pp. 119-123.

 

E4) "Identification and classification of Single-Event Upsets in the configuration memory of SRAM-based FPGAs", M. Ceschia, M. Violante, M. S. Reorda, A. Paccagnella, P. Bernardi, M. Rebaudengo, D. Bortolato, M. Bellato, P. Zambolin and A. Candelori, IEEE Trans. Nucl. Sci., vol. 50, pp. 2088-2094, December 2003.

 

E5) "Evaluating the effects of SEUs affecting the configuration memory of an SRAM-based FPGA", M. Bellato, P. Bernardi, D. Bortolato, A. Candelori, M. Ceschia, A. Paccagnella, M. Rebaudengo, M. Sonza Reorda, M. Violante and P. Zambolin, Proc. of the Design, Automation and Test in Europe Conference and Exhibition (DATECE), pp. 584-589, 16-20 February 2004.

 

E6) "Simulation-based analysis of SEU effects in SRAM-based FPGAs", M. Violante, L. Sterpone, M. Ceschia, D. Bortolato, P. Bernardi, M. Sonza Reorda and A. Paccaganella, IEEE Trans. Nucl. Sci., vol. 51, pp. 3354-3359, December 2004.

 

 

F) Radiation Effects in E2PROM and Flash Memories

 

F1) "Radiation effects on floating-gate memory cells", G. Cellere, P. Pellati, A. Chimenton, J. Wyss, A. Modelli, L. Larcher and A. Paccagnella, IEEE Trans. Nucl. Sci., vol. 48, pp. 2222 -2228, December 2001.

 

F2) "Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation", G. Cellere, A. Paccagnella, L. Larcher, A. Chimenton, J. Wyss, A. Candelori and A. Modelli, IEEE Trans. Nucl. Sci., vol. 49, pp. 3051-3058, December 2002.

 

F3) "Data retention after heavy ion exposure of floating gate memories: analysis and simulation",

L. Larcher, G. Cellere, A. Paccagnella, A. Chimenton, A. Candelori and A. Modelli, IEEE Trans. Nucl. Sci., vol. 50, pp. 2176-2183, December 2003.

 

F4) "A review of ionizing radiation effects in floating gate memories", G. Cellere and A. Paccaganella, IEEE Trans. Dev. Mat. Reliab., vol. 4, pp. 359-370, September 2004.

 

F5) "Transient conductive path induced by a single ion in 10 nm SiO2 layers", G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi and A. Candelori, IEEE Trans. Nucl. Sci., vol. 51, pp.3304-3311, December 2004.

 

G) Radiation Effects in High-Energy Physics ASICs

 

G1) "Single event upset studies on the CMS tracker APV25 readout chip", E. Noah, T. Bauer, D. Bisello, F. Faccio, M. Friedl, J. R. Fulcher, G. Hall, M. Huhtinen, A. Kaminsky, M. Pernicka et al., Nucl. Instrum. Meth., vol. A492, pp. 434-450, June 2002.

 

G2) "Radiation-induced effects on the XAA1.2 ASIC chip for space applications", E. Del Monte, L. Pacciani, G. Porrovecchio, P. Soffitta, E. Costa, G. Di Persio, M. Feroci, M. Mastropiero, E. Morelli, M. Rapisarda, A. Rubini, D. Bisello, A. Candelori, A. Kaminski and J. Wyss, Nucl. Instrum. Meth., vol. A538, pp. 465-482, February 2005.

 

G3) "Radiation testing of GLAST LAT tracker ASICs", R. Rando, A. Bangert, D. Bisello, A. Candelori, P. Giubilato, M. Hirayama, R. Johnson, H. F.-W. Sadrozinski, M. Sugizaki, J. Wyss and M. Ziegler, IEEE Trans. Nucl. Sci., vol. 51, pp. 1067-1073, June 2004.

 

 

H) X-ray source at LNL

 

H1) "An improved termination structure for silicon radiation detectors with all-P-type multiguard and cut-line implants", M. Boscardin, L. Bosisio, A. Candelori, G.F. Dalla Betta, S. Dittongo, P. Gregori, C. Piemonte, I. Rachevskaia, S. Ronchin and N. Zorzi, IEEE Trans. Nucl. Sci., vol. 50, pp. 1001 -1007, August 2003.

 

H2) "X-ray radiation source for total dose radiation studies", D. Bisello, A. Candelori, A. Kaminski, A. Litovchenko, E. Noah and L. Stefanutti, Rad. Phys. Chem., vol. 71, pp. 713-715, October-November 2004.

 

H3) "A model for TID effects on floating gate memory cells", G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, P. Caparra and S. Lora, IEEE Trans. Nucl. Sci., vol. 51, pp. 3753-3758, December 2004.

 

 

I) Neutron Source at LNL

 

I1) "Neutron irradiation effects on standard and oxygenated silicon diodes", D. Bisello, A. Candelori, A. Kaminski, D. Pantano, R. Rando, J. Wyss, A. Andrighetto and V. Cindro, IEEE Trans. Nucl. Sci., vol. 49, pp. 1027 -1034, June 2002.