The facility is dedicated to bulk damage and Single Event Effects studies in semiconductor devices and electronic systems for high energy physics and space applications. The facility is upgraded with an Ion Electron Emission Microscope (IEEM) for mapping the sensitivity of electronic devices and systems to single ion impacts.

The SIRAD irradiation facility is located  at  the  INFN National Laboratory of Legnaro, 10 km from Padova in the North-East of Italy.



Fig.1 The SIRAD Irradiation Facility at the INFN National Laboratory of Legnaro